Optimization of thermoelectric properties on Bi2Te3 thin films deposited by thermal co-evaporation

The Deposition of Bi2Te3 and Sb2Te3 Thermoelectric Thin-films by Thermal Co-Evaporation and Applications in Energy Harvesting

Preparation and Thermoelectric Properties of P-Type (Bi0.25Sb0.75)2Te3 Thin Films

P-type (Bi0.25Sb0.75)2Te3 thermoelectric thin films were deposited by flash evaporation method with thickness between 50-400 nm. All of the thin films were annealed in 503 K for one hour. Phase structure of thin films, surface morphology and stoichiometric ratio were characterized via X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscop...

Micro Thermoelectric Cooler Fabrication: Growth and Characterization of Patterned Sb2Te3 and Bi2Te3 Films

A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during t...

Thermoelectric Characteristics of n-Type Bi2Te3 and p-Type Sb2Te3 Thin Films Prepared by Co-Evaporation and Annealing for Thermopile Sensor Applications

A thermoelectric thin-film device consisting of n-type Bi2Te3 and p-type Sb2Te3 thin-film legs was prepared on a glass substrate by using co-evaporation and annealing process. The Seebeck coefficient and the power factor of the co-evaporated Bi2Te3 film were 130μV/K and 0.7 © 1014W/K2·m, respectively, and became substantially improved to 1160μV/K and 16 © 1014W/K2·m by annealing at 400°C for 20...

Fabrication and characterization of (Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films by flash evaporated deposition

Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films on glass substrates are fabricated by a flash evaporated deposition method. In order to enhance the performance of the thin films, annealing in an argon atmosphere is carried out for 1 hour in the temperature range from 200 to 400 C. The structure of the thin films, in terms of homogeneity and crystalline quality, is investigated by means of x-ray mapp...